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  3. Back-gated OFET Substrate n-doped silicon wafer with 230 nm SiO2 gate-insulator, chips (diced)

Back-gated OFET Substrate n-doped silicon wafer with 230 nm SiO2 gate-insulator, chips (diced)

Item Number: FIPMS176-1PAK
Unit of Measure: 1 X 1 pkg
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1,220.00 CHF 1220.0 CHF 1,220.00 CHF

1,220.00 CHF

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    Manufacturer: Back-gated OFET Substrate
    Manufacturer Number: SIGMA-ALDRICH